Legacy Structures
When Kopin began focusing on the development of GaAs (gallium arsenide) HBT technology in the early 1990s, AlGaAs (aluminum gallium arsenide) alloys were the most advanced wide band-gap materials that could be readily grown on GaAs. Initial implementations of GaAs-based HBTs in wireless power amplifiers utilizing the AlGaAs material system for the emitter layer were quite successful in the marketplace. Kopin began volume shipments of AlGaAs HBT wafers in 1996, and AlGaAs legacy products continue to be a significant part of our HBT business. Although the growth of high-quality aluminum-containing materials is challenging, Kopin has mastered the process and will continue to support AlGaAs HBT products to meet market demands.