Process Development Engineer
| Ref# : | 138020 |
| Location: |
United States Massachusetts Taunton |
| Category: |
HBT |
| Date Added: | Jan 05, 2012 |
Job Description
Requirements
- M.S. or Ph.D. in EE, ChE, MatE, or related field. - Excellent working knowledge of semiconductor device physics, particularly FET and HBT. Strong understanding device operation and ability to interpret parametric test data; must understand process / device interactions. - Hands-on experience and proficiency in compound semiconductor device fabrication: o Aligner-based lithography o Metal deposition o Thermal annealing o Dielectric deposition o Wet and dry etching - Develop and document wafer fabrication processes and subsequently train others to perform these processes. - Mask design / transistor layout (design rules, CAD software) - Parametric device testing (I-V C-V; small-signal and large-signal RF desired) - Parametric data analysis / interpretation (e.g., if a certain parameter is OOS, what is problem in the epi / device structure?) - Ability to interface directly with customers to troubleshoot technical issues. Desired skills: - Process control monitoring (PCM) structures and their design - Material characterization (SEM, x-ray, SIMS, PL, etc.) - Statistical design-of-experiments (DOE) Experience in these areas is a plus: - SPC / process control - Transferring / aligning processes across multiple fab sites - Basic understanding of crystal growth - Basic understanding of RF