The New Production Platform
Kopin's patented GAIN-HBT^® transistors improve power amplifier performance across a host of key parameters, including reduced operating voltage, increased RF performance and greater temperature stability. Furthermore, Kopin's customers can reap these benefits by simply substituting GAIN-HBT wafers in place of standard InGaP HBT products in their circuit manufacturing lines. GAIN-HBT technology provides performance advantages thanks to our band-gap engineering of the transistor base layer, in which gradually varying amounts of indium (In) and nitrogen (N) are incorporated in addition to gallium (Ga) and arsenic (As). The addition of In and N reduces the band-gap energy for low voltage operation, and the gradually varying composition creates an internal electric field for higher speed. Kopin has accumulated the know-how to precisely control the composition of these four elements within the 50-nm-thick layer for optimum transistor performance. This nano-engineered base layer allows power amplifiers to maintain their performance over greater temperature ranges and potentially achieve higher power efficiency. In addition, the reliability of GAIN-HBT devices exceeds that of conventional InGaP HBTs because of a greater band-gap difference between the transistor's emitter and base layer. Similar to Kopin’s standard HBT product line, circuit designers can specify the desired characteristics of the HBT layers and tailor the material to their specific device and circuit application.