Press Releases

Date	Title
4/27/2010	Kopin Celebrates 25 Years of Technology Innovation with Anniversary Event at Gillette Stadium
4/26/2010	Kopin Adds Key Technical Talent to Meet Growing Business Demands
12/10/2008	Kopin Receives NASA Award to Develop Nanostructured Indium Gallium Phosphide Solar Cell Technology
5/01/2008	Kopin Selected for Award of NASA Solar Cell Development Contract
4/14/2008	Kopin Extends HBT Purchase and Supply Agreement with Skyworks Solutions
10/11/2007	Kopin Leads GaAs HBT Market with Highest Performing 6-inch Wafers Produced in Industry's Most Advanced Systems
3/06/2007	Kopin Announces Development of GaN Transistors for Next-Generation Power Amplifiers
4/13/2006	Kopin Boosts HBT Wafer Manufacturing Capacity with Purchase of AIXTRON's Newest High-Volume MOCVD Systems; Additional Capacity to Support Increasing Demand for Handset and WiFi Power Amplifiers
2/08/2006	Kopin Extends its Multi-Year HBT Purchase and Supply Agreement with Skyworks Solutions; Agreement Supports Increasing Demand for Skyworks' Cell Phone Power Amplifiers
1/17/2006	Kopin's New Generation of GAIN-HBT Wafers Enters Initial Volume Production
3/10/2005	Kopin Ships 500,000th HBT Transistor Wafer; Chips from Kopin's Precision-Grown Wafers Used in Billions of Cell Phones Worldwide
1/31/2005	Kopin Awarded U.S. Patents for GAIN-HBT Transistor Wafers
12/16/2003	Kopin Announces ISO 9001:2000 Certification; High Volume Manufacturing Facilities Receive Upgraded Certification
1/23/2003	Kopin Presents Results of a New High-Efficiency, Low-Voltage Transistor for Wireless Market
10/16/2002	Kopin Announces Record Results for Advanced GAIN-HBT; Wafer-Engineered D-HBT Delivers Platform for Next-Generation Power Amplifiers
4/11/2002	Kopin Presents Next-Generation HBT Results for Wireless & Fiber-Optic Circuits; Company Discusses Advanced Wafer Engineering-TM- Techniques for Superior Transistor Performance
11/27/2001	Kopin Supplying Advanced InGaP HBT Wafers for Yokogawa Electric's 40 Gbps Optical Network Modules; First Commercial Use of InGaP HBTs for OC-768 Applications
5/29/2001	Kopin Announces Record Performance For GaAs-based GaInAsN HBTs; Company's band-gap engineering technique dramatically enhances RF Performance and DC Current Gain
5/21/2001	Kopin Achieves Industry-Leading Results in Development of Carbon-Doped InP-based Transistors
5/17/2001	Kopin Announces Agreement to Supply 6-Inch InGaP HBT Wafers to ANADIGICS; Multi-Year Production Program to Support ANADIGICS' Advanced Telecom Circuit Initiatives
5/01/2001	Kopin Signs Multi-Year Program To Be HBT Wafer Provider to Alpha Industries
2/08/2001	Kopin Announces Joint Development Agreement with Rockwell Science Center to Develop InP HBTs for Ultra-High-Speed Circuits
1/18/2001	Kopin Announces New HBTs for Advanced Wireless Handsets InGaP/GaInAsN Transistors Offer Enhanced RF Circuit Design and Performance
1/09/2001	Kopin Announces Advanced Carbon-Doped InP-based HBTs; HBTs Developed for 40 GB/s Fiber Optics Networks and Next Generation Wireless Handsets

HBT