Kopin's HBT transistors are formed using MOCVD (Metalorganic Chemical Vapor Deposition) growth processes. The critical layers formed in these vertical transistors are only about 50 nanometers thick. Kopin's tight control of layer thickness consistently enables its customers to achieve unsurpassed circuit yields, thereby greatly improving production efficiency and lowering costs. Kopin's design teams continually work with customers to fashion new transistor types, improve circuit performance, integrate new functions on power amplifier circuits, and more quickly bring new products to market.

In the early 1990's Kopin introduced heavily carbon-doped HBTs with low diffusivity, enabling high frequency performance and robust reliability. Kopin was also at the forefront in the development of InGaP emitter HBTs for further improvements in both circuit reliability and high temperature operation, allowing III-V HBTs to serve more demanding applications. Kopin continues to push the limits of device performance, efficiency and reliability through its investment in advanced technologies.

Kopin has developed a new generation of GAIN-HBT ^® transistors that incorporate new materials into novel transistor designs. GAIN-HBT transistors improve power amplifier performance across a host of key parameters, including reduced operating voltage, increased RF performance and greater temperature stability. Furthermore, Kopin's customers can reap these benefits by simply substituting GAIN-HBT wafers in place of standard InGaP HBT products in their circuit manufacturing lines. These, in turn, enable higher levels of circuit performance and integration.

More technical information on GAIN-HBT can be found in the following articles.

Kopin bandgap engineering improves HBT performance

Reliability evaluation of InGaAsN for PA handset applications

Impact of compositionally graded base regions on the DC and RF properties of reduced turn-on voltage InGaP-GaInAsN DHBTs

Heterojunction bipolar transistors implemented with GaInNAs materials

Implementation of reduced turn-on voltage InGaP HBTs using graded GaInAsN based regions