The Current Industry Standard
In 1998, Kopin introduced InGaP (indium gallium phosphide) HBT product line, which offers significant improvements over AlGaAs emitter structures. At a device level, InGaP emitter HBTs exhibit improvements in temperature and bias stability, as well as significantly enhanced reliability. InGaP emitter HBTs are also easier to process, enabling our customers to achieve higher yields. InGaP is currently replacing AlGaAs as the emitter structure of choice for GaAs-based HBTs.