NASDAQ: KOPN $ 1.41 -0.02( -1.4%) Volume: 249,221 December 14, 2018 20 min delay

Kopin's New Generation of GAIN-HBT Wafers Enters Initial Volume Production

01/17/2006

Company's Patented Technology to Help Power Tens of Millions of Handsets in 2006

TAUNTON, Mass.--(BUSINESS WIRE)--Jan. 17, 2006--Kopin(R) Corp. (NASDAQ: KOPN), the world's leading provider of HBT (heterojunction bipolar transistor) wafers, today announced that its new-generation GAIN-HBT(R) (GaAsInN HBT) product has initiated volume production this year. Kopin expects the GAIN-HBT will be used to manufacture tens of millions of cell phone power amplifiers with these first design-ins. Kopin's patented GAIN-HBT transistors improve power amplifier performance across a host of key parameters, including reduced operating voltage, increased RF performance and greater temperature stability. Furthermore, Kopin's customers can reap these benefits by simply substituting GAIN-HBT wafers in place of standard InGaP HBT products in their circuit manufacturing lines.

"GAIN-HBT technology provides performance advantages thanks to our band-gap engineering of the transistor base layer, in which gradually varying amounts of indium (In) and nitrogen (N) are incorporated in addition to gallium (Ga) and arsenic (As)," said Dr. Roger Welser, Kopin's director of new product development. "The addition of In and N reduces the band-gap energy for low voltage operation, and the gradually varying composition creates an internal electric field for higher speed. Kopin has accumulated the know-how to precisely control the composition of these four elements within the 50-nm-thick layer for optimum transistor performance. This nano-engineered base layer allows power amplifiers to maintain their performance over greater temperature ranges and potentially achieve higher power efficiency. In addition, the reliability of GAIN-HBT devices exceeds that of conventional InGaP HBTs because of a greater band-gap difference between the transistor's emitter and base layer."

The latest developments for GAIN-HBT wafers will be presented at the IEEE Topical Workshop on Power Amplifiers for Wireless Communication in San Diego, CA today. The collaborative effort between Skyworks Solutions, Inc. and Kopin will report on the low-voltage, low-temperature performance of a fully integrated PCS handset power amplifier based on GAIN transistors. Wireless handset manufacturers would prefer to simplify their systems by using power amplifiers with a reference voltage of 2.6 V, a level used for other circuits, instead of the 2.8 V typically used in today's handsets. Most GaAs-HBT power amplifier ICs cease to function at the low temperature range when given a 2.6 V reference voltage; however, GAIN-HBT power amplifier ICs are fully operational under the low voltage, low temperature conditions.

"After many years of development at laboratories, it is a major milestone to start volume production with this advanced technology," notes Dr. John C. C. Fan, Kopin's president and chief executive officer. "The GAIN-HBT with superior performance offers more flexibility in circuit design to meet ever increasing performance requirements for the new generation of advanced handsets. We look forward to working closely with our customers to develop new products that leverage additional attributes of this technology."

About Kopin

Kopin is the largest U.S. manufacturer of microdisplays to the consumer electronics, industrial and military markets and the world's largest merchant supplier of heterojunction bipolar transistor (HBT) wafers for power amplifier integrated circuits. Since introducing its award-winning microdisplay technology in 1999, Kopin has shipped more than 15 million CyberDisplays for digital cameras, personal video eyewear, camcorders, thermal weapon sights and head-mounted displays. The Company also has shipped more than 600,000 HBT wafers, which have been integrated into more than one billion wireless handsets and into WiFi, VoIP and high-speed Internet data transmission systems. Kopin's technology is protected by more than 200 global patents and patents pending. For more information, please visit Kopin's Web site at www.kopin.com.

GAIN-HBT and The NanoSemiconductor Company are registered trademarks of Kopin Corporation.

Statements in this news release about GAIN-HBT Technology may be considered "forward-looking" statements under the "Safe Harbor" provisions of the Private Securities Litigation Reform Act of 1995. These statements include; the projected initial volume production of GAIN-HBT this year; Kopin's expectation that the GAIN-HBT will be used to manufacture tens of millions of cell phone power amplifiers with this first design-in; enhanced device characteristics and better reliability of GAIN-HBT transistors; the improvements that can be achieved by simply substituting GAIN-HBT wafers in place of standard InGaP HBT products in customers' circuit manufacturing lines; potentially higher power efficiency of GAIN-HBT power amplifiers; GAIN-HBT's promise to offer more flexibility in circuit design for higher performance; and Kopin's expectation to work with its customers to develop new products. These statements involve a number of risks and uncertainties that could materially affect future results. These risk factors include: the potential for changes in demand for wireless devices, wireless handsets, wireless devices and handsets with greater functionality; the potential for competing technologies to offer superior performance or be offered at a lower cost than GAIN-HBT products, our ability to manufacture GAIN-HBT(TM) products; general economic and business conditions; changes in business conditions within the wireless component industry; the impact of competitive products and pricing; availability of third-party components; customer qualification of our GAIN-HBT manufacturing processes; and other risk factors and cautionary statements listed in Kopin's periodic reports and registration statements filed with the Securities and Exchange Commission. These include, but are not limited to, the Company's Annual Report on Form 10-K for the year ended December 25, 2004 and Form 10-Q for the period ended September 24, 2005.

Kopin - The NanoSemiconductor Company(R)

CONTACT: Kopin Corporation
Richard Sneider, 508-824-6696
rsneider@kopin.com
or
Beaupre & Co. Public Relations, Inc.
Christine LeCompte, 603-559-5802
lecompte@beaupre.com

SOURCE: Kopin